Exposure apparatus and device fabrication method

ABSTRACT

An exposure apparatus is provided which can supply and collect a liquid in a prescribed state, and that can suppress degradation of a pattern image projected onto a substrate. The exposure apparatus is provided with a nozzle member ( 70 ) having a supply outlet ( 12 ) that supplies a liquid (LQ) and a collection inlet ( 22 ) that collects a liquid (LQ), and a vibration isolating mechanism ( 60 ) that supports the nozzle member ( 70 ) and vibrationally isolates the nozzle member ( 70 ) from a lower side step part ( 7 ) of a main column ( 1 ).

TECHNICAL FIELD

The present invention relates to an exposure apparatus that exposes asubstrate via a liquid, and a device fabrication method that uses thisexposure apparatus.

The disclosure of the following priority application is herebyincorporated by reference in its entirety: Japanese Patent ApplicationNo. 2004-89348, filed on Mar. 25, 2004.

BACKGROUND ART

Semiconductor devices and liquid crystal display devices are fabricatedby a so-called photolithography technique, wherein a pattern formed on amask is transferred onto a photosensitive substrate. An exposureapparatus used by this photolithographic process has a mask stage thatsupports the mask, and a substrate stage that supports the substrate,and transfers the pattern of the mask onto the substrate via aprojection optical system while successively moving the mask stage andthe substrate stage. There has been demand in recent years for higherresolution projection optical systems in order to handle the much higherlevels of integration of device patterns. The shorter the exposurewavelength used and the larger the numerical aperture of the projectionoptical system, the greater the resolution of the projection opticalsystem. Consequently, the exposure wavelength used in exposureapparatuses has shortened year by year, and the numerical aperture ofprojection optical systems has also increased. Furthermore, thecurrently mainstream exposure wavelength is the 248 nm KrF excimerlaser, but an even shorter wavelength 193 nm ArF excimer laser is alsobeing commercialized. In addition, like resolution, the depth of focus(DOF) is also important when performing an exposure. The followingequations respectively express the resolution R and the depth of focusδ.R=k ₁·λ/NA  (1)δ=±k ₂·λ/NA²  (2)

Therein, λ is the exposure wavelength, NA is the numerical aperture ofthe projection optical system, and k₁ and k₂ are the processcoefficients. Equations (1) and (2) teach that shortening the exposurewavelength λ increases the resolution R, and that increasing thenumerical aperture NA decreases the depth of focus δ.

If the depth of focus δ becomes excessively small, then it will becomedifficult to align the surface of the substrate with the image plane ofthe projection optical system, and there will be a risk of insufficientmargin of focus during the exposure operation. Accordingly, a liquidimmersion method has been proposed, as disclosed in, for example, PatentDocument 1 below, as a method to substantially shorten the exposurewavelength and increase the depth of focus. This liquid immersion methodfills a liquid, such as water or an organic solvent, between the tipsurface (lower surface) of the projection optical system and the surfaceof the substrate, thus taking advantage of the fact that the wavelengthof the exposure light in a liquid is 1/n that of in air (where n is therefractive index of the liquid, normally approximately 1.2-1.6), therebyimproving the resolution as well as increasing the depth of focus byapproximately n times. The disclosure of the following pamphlet ishereby incorporated by reference in its entirety to the extent permittedby the national laws and regulations of the designated states (orelected states) designated by the present international patentapplication.

[PATENT DOCUMENT 1] International Publication WO99/49504

Incidentally, although nozzles are used for the supply and collection ofthe liquid in the abovementioned related art, there is a possibilitythat the pattern image projected onto the substrate via the projectionoptical system and the liquid will degrade if vibrations produced by thenozzles are transmitted to, for example, the projection optical system.In addition, there is also a possibility that the position of thenozzles will fluctuate due to changes in the pressure of the liquid, andthere is also a possibility that it will become difficult to supply andcollect the liquid in the desired state.

DISCLOSURE OF INVENTION

The present invention was created considering such circumstances, andhas an object to provide an exposure apparatus that can supply andcollect a liquid in a desired state, and can suppress the degradation ofa pattern image projected onto a substrate, and a device fabricationmethod that uses this exposure apparatus.

An exposure apparatus of the present invention is an exposure apparatusthat exposes a substrate via a liquid, including: a nozzle member havingat least any one of a supply outlet that supplies a liquid and acollection inlet that collects a liquid; and a vibration isolatingmechanism that supports the nozzle member and vibrationally isolates thenozzle member from a prescribed support member.

According to the present invention, because the vibration isolatingmechanism is provided that supports the nozzle member and vibrationallyisolates it from the prescribed support member, it is possible tosuppress the impact on the exposure accuracy due to vibrations generatedby the nozzle member. Accordingly, it is possible to prevent thedegradation of the pattern image projected onto the substrate.

An exposure apparatus of the present invention is an exposure apparatusthat exposes a substrate via a liquid, including: a nozzle member havingat least any one of a supply outlet that supplies a liquid and acollection inlet that collects a liquid; a support member that supportsthe nozzle member; and an adjustment mechanism that adjusts a positionalrelationship between the support member and the nozzle member.

According to the present invention, the adjustment mechanism can adjustthe position of the nozzle member with respect to the support member,and the liquid for forming the immersion area can therefore be suppliedand collected in a state in which the nozzle member is disposed at anoptimal position. Accordingly, the immersion area can be satisfactorilyformed, and immersion exposure can be performed with good accuracy.

An exposure apparatus of the present invention is an exposure apparatusthat exposes a substrate via an optical system and a liquid, including:a nozzle member supported by a prescribed support member, and having atleast any one of a supply outlet that supplies a liquid and a collectioninlet that collects a liquid; and an adjustment mechanism that adjusts apositional relationship between the optical system and the nozzlemember.

According to the present invention, the adjustment mechanism can adjustthe position of the nozzle member with respect to the optical system,and the liquid for forming the immersion area can therefore be suppliedand collected in a state in which the nozzle member is disposed at anoptimal position. Accordingly, the immersion area can be satisfactorilyformed, and immersion exposure can be performed with good accuracy.

An exposure apparatus of the present invention is an exposure apparatusthat exposes a substrate via a liquid, including: a nozzle membersupported by a prescribed support member, and having at least any one ofa supply outlet that supplies a liquid and a collection inlet thatcollects a liquid; a substrate stage that holds the substrate; and anadjustment mechanism that has a drive apparatus that drives the nozzlemember with respect to the support member, and that adjusts a positionalrelationship between the substrate stage and the nozzle member.

According to the present invention, the adjustment mechanism can adjustthe position of the nozzle member with respect to the substrate stage,and the liquid for forming the immersion area can therefore be suppliedand collected in a state in which the nozzle member is disposed at anoptimal position. Accordingly, the immersion area can be satisfactorilyformed, and immersion exposure can be performed with good accuracy.

An exposure apparatus according to another aspect of the presentinvention is an exposure apparatus that exposes a substrate via aliquid, having: a nozzle member that has at least any one of a supplyoutlet that supplies a liquid and a collection inlet that collects aliquid; in which, at least one part of the nozzle member is movable inthe optical axis direction of the exposure light that exposes thesubstrate.

A device fabrication method of the present invention uses an exposureapparatus as recited above. According to the present invention, becausethe pattern image can be transferred onto a substrate with goodaccuracy, a device having the desired performance can be manufactured.

According to the present invention, a liquid can be supplied andcollected in a desired state, and the degradation of a pattern imageprojected onto a substrate can be suppressed.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a schematic block diagram that depicts one embodiment of anexposure apparatus of the present invention.

FIG. 2 is a side view that depicts the vicinity of a nozzle member.

FIG. 3 is a plan view that depicts the nozzle member.

FIG. 4 is a side view that depicts another embodiment of the exposureapparatus of the present invention.

FIG. 5 is a side view that depicts another embodiment of the exposureapparatus of the present invention.

FIG. 6 is a flow chart that depicts one example of the process forfabricating a semiconductor device.

EXPLANATION OF SYMBOLS

-   1 Main column (support member)-   2 Optical element-   7 Lower side step part (support member)-   12 Liquid supply port-   22 Liquid collection port-   60 Vibration isolating mechanism (adjustment mechanism)-   61-63 Drive apparatuses-   65 Active vibration isolating mechanism-   70 Nozzle member-   72 Passive vibration isolating mechanism-   80, 100, 110, . . . Position measuring instruments-   90 Accelerometer-   AR1 Projection area-   AR2 Immersion area-   EX Exposure apparatus-   LQ Liquid-   P Substrate-   PL Projection optical system-   PST Substrate stage

BEST MODE FOR CARRYING OUT THE INVENTION

The following explains the exposure apparatus and device fabricationmethod of the present invention, referencing the drawings. FIG. 1 is aschematic block diagram that depicts one embodiment of the exposureapparatus of the present invention.

In FIG. 1, the exposure apparatus EX includes: a mask stage MST thatsupports a mask M; a substrate stage PST that supports a substrate P; anillumination optical system IL that illuminates with an exposure lightEL the mask M supported by the mask stage MST; a projection opticalsystem PL that projects and exposes a pattern image of the mask Milluminated by the exposure light EL onto the substrate P supported bythe substrate stage PST; and a control apparatus CONT that providesoverall control of the operation of the entire exposure apparatus EX.

The control apparatus CONT is connected to various measuring means ofthe exposure apparatus EX (e.g., interferometers 35, 45, a focusleveling detection system, nozzle position measuring instruments 84-86,and the like), drive apparatuses (e.g., a mask stage drive apparatus, asubstrate stage drive apparatus, nozzle drive apparatuses 61-63, and thelike), and the like, and is constituted so that it is possible totransmit measurement results and drive instructions thereamong.

Furthermore, the exposure apparatus EX includes a main column 1 thatsupports the mask stage MST and the projection optical system PL. Themain column 1 is installed on a base plate BP mounted horizontally onthe floor. On the main column 1 is formed an inwardly protruding upperside step part 3 and lower side step part 7.

The exposure apparatus EX of the present embodiment is a liquidimmersion type exposure apparatus that applies the liquid immersionmethod to substantially shorten the exposure wavelength, improve theresolution, as well as substantially increase the depth of focus, andincludes a liquid supply mechanism 10 that supplies a liquid LQ on thesubstrate P, and a liquid collection mechanism 20 that collects theliquid LQ on the substrate P. At least during the transfer of thepattern image of the mask M onto the substrate P, the exposure apparatusEX forms the immersion area AR2, by the liquid LQ supplied from theliquid supply mechanism 10, in one part on the substrate P that includesa projection area AR1 of the projection optical system PL. Specifically,the exposure apparatus EX exposes the substrate P by filling the liquidLQ between an optical element 2 of the image plane side tip part of theprojection optical system PL and the surface of the substrate P; andthen projecting the pattern image of the mask M onto the substrate P viathe liquid LQ between this projection optical system PL and thesubstrate P, and via the projection optical system PL.

As an example, the present embodiment explains a case of using, as theexposure apparatus EX, a scanning type exposure apparatus (a so-calledscanning stepper) that, while synchronously moving the mask M and thesubstrate P in mutually different orientations (reverse directions) inthe scanning direction, exposes the substrate P with the pattern formedon the mask M. In the following explanation, the direction thatcoincides with an optical axis AX of the projection optical system PL isthe Z axial direction, the direction in which the mask M and thesubstrate P synchronously move in the plane perpendicular to the Z axialdirection (the scanning direction) is the X axial direction, and thedirection perpendicular to the Z axial direction and the X axialdirection (the non-scanning direction) is the Y axial direction. Inaddition, the rotational (inclined) directions around the X, Y, and Zaxes are the θX, θY, and θZ directions, respectively. Furthermore,“substrate” herein includes one in which a semiconductor wafer is coatedwith a photoresist, which is a photosensitive material, and “mask”includes a reticle in which the pattern of a device which is reduced andprojected onto the substrate is formed.

The illumination optical system IL is supported by a support column 4fixed to an upper part of the main column 1. The illumination opticalsystem IL illuminates with the exposure light EL the mask M supported bythe mask stage MST, and has: an exposure light source; an opticalintegrator that uniformizes the intensity of the luminous flux emittedfrom the exposure light source; a condenser lens that condenses theexposure light EL from the optical integrator; a relay lens system; avariable field stop that sets to a slit shape an illumination region onthe mask M illuminated by the exposure light EL; and the like. Theillumination optical system IL illuminates the prescribed illuminationregion on the mask M with the exposure light EL, having a uniformillumination intensity distribution. Examples of light used as theexposure light EL emitted from the illumination optical system ILinclude: deep ultraviolet light (DUV light), such as bright lines (g, h,and i lines) in the ultraviolet region emitted from a mercury lamp forexample, and KrF excimer laser light (248 nm wavelength); and vacuumultraviolet light (VUV light), such as ArF excimer laser light (193 nmwavelength) and F₂ laser light (157 nm wavelength). ArF excimer laserlight is used in the present embodiment.

In the present embodiment, pure water is used as the liquid LQ. Purewater is capable of transmitting not only ArF excimer laser light, butalso deep ultraviolet light (DUV light), such as the bright lines (g, h,and i lines) in the ultraviolet region emitted from, for example, amercury lamp, and KrF excimer laser light (248 nm wavelength).

The mask stage MST supports the mask M, and includes an aperture part 36at its center part through which passes the pattern image of the mask M.A mask base plate 31 is supported on the upper side step part 3 of themain column 1 via a vibration isolating unit 33. An aperture part 37through which passes the pattern image of the mask M is also formed atthe center part of the mask base plate 31. A plurality of gas bearings(air bearings) 32, which are noncontact bearings, is provided at a lowersurface of the mask stage MST.

The mask stage MST is noncontactually supported by the air bearings 32to an upper surface (guide surface) 31A of the mask base plate 31, and,by the mask stage drive apparatus, such as a linear motor, the maskstage MST is two dimensionally movable within a plane perpendicular tothe optical axis AX of the projection optical system PL, i.e., withinthe XY plane, and is micro-rotatable about the θZ direction. A movablemirror 34 is provided at a prescribed position on the +X side on themask stage MST. In addition, the laser interferometer 35 is provided ata position opposing the movable mirror 34. Likewise, although not shown,a movable mirror is also provided on the +Y side on the mask stage MST,and a laser interferometer is provided at a position opposing thereto.The laser interferometer 35 measures in real time the position, in thetwo dimensional direction, and the rotational angle in the θZ direction(depending on the case, also including the rotational angles in the θX,θY directions) of the mask M on the mask stage MST, and outputs themeasurement results to the control apparatus CONT. The control apparatusCONT is connected to the laser interferometer 35 and the mask stagedrive apparatus, and drives the mask stage drive apparatus based on themeasurement results of the laser interferometer 35, thereby positioningthe mask M, which is supported by the mask stage MST.

The projection optical system PL projects and exposes the pattern of themask M onto the substrate P with a prescribed projection magnificationβ, has a plurality of optical elements, including the optical element(lens) 2 provided at the terminal part on the substrate P side (theimage plane side of the projection optical system PL), and these opticalelements are supported by a lens barrel PK. In the present embodiment,the projection optical system PL is a reduction system having aprojection magnification β of, for example, ¼ or ⅕. Furthermore, theprojection optical system PL may be either a unity magnification systemor an enlargement system. In addition, the optical element (lens) 2 ofthe tip part of the projection optical system PL of the presentembodiment is attachably and detachably (replaceably) provided to andfrom the lens barrel PK, and the liquid LQ of the immersion area AR2contacts the optical element 2.

The optical element 2 is made of fluorite. Because fluorite has a highaffinity for water, the substantial entire surface of a liquid contactsurface 2A of the optical element 2 can be made to closely contact theliquid LQ. Namely, because the liquid (water) LQ having a high affinityfor the liquid contact surface 2A of the optical element 2 is suppliedin the present embodiment, the characteristics of close contact betweenthe liquid LQ and the liquid contact surface 2A of the optical element 2are excellent, and the optical path between the optical element 2 andthe substrate P can therefore be reliably filled with the liquid LQ.Furthermore, the optical element 2 may also be made of quartz, which hasa high affinity for water. In addition, the liquid contact surface 2A ofthe optical element 2 may also be treated to make it hydrophilic(lyophilic), such as by depositing MgF₂, Al₂O₃, and SiO₂, therebyimproving its affinity for the liquid LQ.

An outer circumferential part of the lens barrel PK is provided with aflange part 8. In addition, a lens barrel base plate 5 is supported viaa vibration isolating unit 6 on an upper surface of the lower side steppart 7 of the main column 1. Furthermore, engaging the flange part 8 tothe lens barrel base plate 5 causes the lens barrel PK to be supportedby the lens barrel base plate 5. The projection optical system PL isconstituted so that it is supported by the lower side step part 7 of themain column 1 via the lens barrel base plate and the vibration isolatingunit 6.

The substrate stage PST is movably provided so that it supports thesubstrate P via a substrate holder PH. A recessed part 46 is provided onthe substrate stage PST, and the substrate holder PH is disposed in therecessed part 46. An upper surface 47 of the substrate stage PST outsideof the recessed part 46 is a flat surface (flat part) so that it issubstantially the same height as (and flush with) the surface of thesubstrate P supported by the substrate holder PH.

By providing the upper surface 47 around the substrate P andsubstantially flush with the surface of the substrate P, the liquid LQcan be held on the image plane side of the projection optical system PLand the immersion area AR2 can be favorably formed, even duringimmersion exposure of an edge area E of the substrate P. In addition,although there is a gap of approximately 0.1-2.0 mm between the uppersurface 47 and the edge part of the substrate P, hardly any of theliquid LQ flows into that gap due to the surface tension of the liquidLQ, and the liquid LQ can be held below the projection optical system PLby the upper surface 47 even when exposing the vicinity of thecircumferential edge of the substrate P.

The upper surface 47 of the substrate stage PST is treated to make itwater repellent, and is therefore water repellent. Examples of waterrepellent treatment for the upper surface 47 include coating with aliquid repellent material, e.g., a fluororesin material or an acrylicresin material, as well as affixing a thin film made of theabovementioned liquid repellent material. A material that is insolublein the liquid LQ is used as the liquid repellent material to make itwater repellent. Furthermore, all or part of the substrate stage PST maybe made of a water repellent material, such as a fluororesin like, forexample, polytetrafluoroethylene (Teflon™).

A plurality of gas bearings (air bearings) 42, which are noncontactbearings, is provided at the lower surface of the substrate stage PST. Asubstrate base plate 41 is supported on the base plate BP via avibration isolating unit 43. The substrate stage PST is noncontactuallysupported by the air bearings 42 on an upper surface (guide surface) 41Aof the substrate base plate (base part) 41, and, by the substrate stagedrive apparatus, which includes linear motors 51, 52, 53 and the like,which are discussed later, the substrate stage PST is two dimensionallymoveable within a plane perpendicular to the optical axis AX of theprojection optical system PL, i.e., within the XY plane, and is alsomicro-rotatable about the θZ direction. Furthermore, the substrate stagePST is movably provided also in the Z axial direction, the θX direction,and the θY direction.

The substrate stage PST is supported freely movable in the X axialdirection by an X guide stage 54. The substrate stage PST isnoncontactually supported by a magnetic guide having an actuator and amagnet that maintains a gap of a prescribed size in the Z axialdirection with respect to the X guide stage 54. The substrate stage PSTis movable by a prescribed stroke in the X axial direction by the Xlinear motor 53 while being guided by the X guide stage 54. The X linearmotor 53 has a stator 53A provided in the X guide stage 54 extending inthe X axial direction, and a slider 53B provided corresponding to thisstator 53A and fixed to the substrate stage PST. Furthermore, thesubstrate stage PST moves in the X axial direction by driving the slider53B with respect to the stator 53A. The X linear motor 53 moves thesubstrate stage PST in the X axial direction in a state noncontactuallysupported by the X guide stage 54.

The ends of the X guide stage 54 in the longitudinal direction areprovided with the pair of Y linear motors 51, 52 capable of moving thisX guide stage 54 along with the substrate stage PST in the Y axialdirection. The Y linear motors 51, 52 respectively have sliders 51B,52B, provided at both ends of the X guide stage 54 in the longitudinaldirection, and stators 51A, 52A provided corresponding to these sliders51B, 52B. The stators 51A, 52A are supported on the base plate BP.Furthermore, the X guide stage 54 along with the substrate stage PSTmoves in the Y axial direction by driving the sliders 51B, 52B withrespect to the stators 51A, 52A. In addition, the X guide stage 54 canalso be rotated in the θZ direction by adjusting the respective drivesof the Y linear motors 51, 52. Accordingly, the substrate stage PST ismovable substantially integrally with the X guide stage 54 in the Yaxial direction and the θZ direction by these linear motors 51, 52.

Guide parts 55, 55 that guide the movement of the X guide stage 54 inthe Y axial direction are provided respectively on both sides in the Xaxial direction, sandwiching the substrate base plate 41. Each guidepart 55 is supported on the base plate BP. Further, a U-shaped guidedmember 57 is provided on the lower surface of the X guide stage 54 ateach end of the X guide stage 54 in the longitudinal direction. Eachguide part 55 is provided so that it mates with the guided member 57,and so that the upper surface (the guide surface) of each guide part 55opposes the inner surface of the guided member 57. The guide surface ofeach guide part 55 is provided with a gas bearing (air bearing) 56,which is a noncontact bearing, and the X guide stage 54 isnoncontactually supported by the guide surface.

The substrate stage drive apparatus, which includes the abovementionedlinear motors 51, 52, 53, is connected to the control apparatus CONT,and the control apparatus CONT controls the substrate stage driveapparatus. In addition, the exposure apparatus EX has a focus levelingdetection system (not shown) that detects the position of the surface ofthe substrate P supported by the substrate stage PST. The focus levelingdetection system is connected to the control apparatus CONT, and thecontrol apparatus CONT controls the angle of inclination and the focusposition (Z position) of the substrate P on the substrate stage PSTbased on the detection result of the focus leveling detection system,and aligns the surface of the substrate P with the image plane of theprojection optical system PL by an auto focus system and an autoleveling system.

The substrate stage PST is provided with a moveable mirror 44. The uppersurface of the moveable mirror 44 is substantially flush with the uppersurface 47 of the substrate stage PST. The same as the upper surface 47of the substrate stage PST, the upper surface of the moveable mirror 44is also treated to make it water repellent, and is therefore waterrepellent. In addition, the laser interferometer 45 is provided at aposition opposing the moveable mirror 44. The laser interferometer 45measures in real time the rotational angle and the position in the twodimensional direction of the substrate P on the substrate stage PST, andthe measurement results are outputted to the control apparatus CONT. Thelaser interferometer 45 and the substrate stage drive apparatus areconnected to the control apparatus CONT, and the control apparatus CONTpositions the substrate P, supported by the substrate stage PST, in theXY plane by driving the substrate stage drive apparatus based on themeasurement result of the laser interferometer 45.

The liquid supply mechanism 10 supplies the prescribed liquid LQ on theimage plane side of the projection optical system PL, and has: a liquidsupply part 11 capable of feeding the liquid LQ; and supply pipes 13(13A, 13B), each whose one end part is connected to the liquid supplypart 11. The liquid supply part 11 is provided with a tank that storesthe liquid LQ, a pressure pump, and the like. The control apparatus CONTis connected to the liquid supply part 11, and the control apparatusCONT controls the liquid supply operation of the liquid supply part 11.The liquid supply mechanism 10 supplies the liquid LQ onto the substrateP when forming the immersion area AR2 on the substrate P.

The liquid collection mechanism 20 collects the liquid LQ on the imageplane side of the projection optical system PL, and has a liquidcollection part 21 capable of collecting the liquid LQ, and collectionpipes 23 (23A, 23B), whose one end part is connected to the liquidcollection part 21. The liquid collection part 21 is provided with avacuum system (a suction apparatus), e.g., a vacuum pump, and the like;a gas-liquid separator that separates the collected liquid LQ and gas, atank that stores the collected liquid LQ; and the like. Furthermore, thevacuum system of the plant where the exposure apparatus EX is disposedmay be used as the vacuum system, without providing the exposureapparatus EX with a vacuum pump. The control apparatus CONT is connectedto the liquid collection part 21, and the control apparatus CONTcontrols the liquid collection operation of the liquid collection part21. To form the immersion area AR2 on the substrate P, the liquidcollection mechanism 20 collects a prescribed quantity of the liquid LQon the substrate P that was supplied by the liquid supply mechanism 10.

A nozzle member 70 is disposed in the vicinity of the optical element 2,among the plurality of optical elements that constitutes the projectionoptical system PL, that contacts the liquid LQ. The nozzle member 70 issupported by the vibration isolating mechanism 60 and is vibrationallyisolated from the lower side step part 7 of the main column 1. Thenozzle member 70 is an annular member provided above the substrate P(and above the substrate stage PST) so that it surrounds the sidesurface of the optical element 2, and constitutes a part of the liquidsupply mechanism 10 and the liquid collection mechanism 20,respectively.

Furthermore, the nozzle member 70 is made of, for example, aluminum,titanium, stainless steel, duralumin, or an alloy containing such.Alternatively, the nozzle member 70 may include a transparent member (anoptical member) having light transmitting properties, such as glass(quartz).

The following explains the nozzle member 70, referencing FIG. 2 and FIG.3. FIG. 2 is an enlarged side view of the vicinity of the nozzle member70, and FIG. 3 is a plan view that views the nozzle member 70 fromabove.

The nozzle member 70 is provided above the substrate P (the substratestage PST), and includes liquid supply ports (liquid supply outlets) 12(12A, 12B) disposed so that they oppose the surface of the substrate P.In the present embodiment, the nozzle member 70 has two liquid supplyports 12A, 12B. The liquid supply ports 12A, 12B are provided at a lowersurface 70A of the nozzle member 70.

In addition, the interior of the nozzle member 70 has supply passageways14 (14A, 14B) corresponding to the liquid supply ports 12 (12A, 12B). Aplurality (two) of supply pipes 13 (13A, 13B) is provided so that itcorresponds to the liquid supply ports 12A, 12B and the supplypassageways 14A, 14B.

Furthermore, the nozzle member 70 is provided above the substrate P (thesubstrate stage PST), and has liquid collection ports (liquid collectioninlets) 22 (22A, 22B) disposed so that they oppose the surface of thesubstrate P. In the present embodiment, the nozzle member 70 has twoliquid collection ports 22A, 22B. The liquid collection ports 22A, 22Bare provided at the lower surface 70A of the nozzle member 70.

In addition, the interior of the nozzle member 70 has collectionpassageways 24 (24A, 24B) corresponding to the liquid collection ports22A, 22B. A plurality (two) of the collection pipes 23 (23A, 23B) isprovided so that it corresponds to the liquid collection ports 22A, 22Band the collection passageways 24A, 24B.

The other end parts of the supply pipes 13A, 13B are connected to eachone end part of tube members 16 (16A, 16B), which are expandable andcontractible, and flexible. [Each] one end part of the supplypassageways 14A, 14B are connected to the other end parts of the tubemembers 16A, 16B, and the other end parts of the supply passageways 14A,14B are connected to the liquid supply ports 12A, 12B.

In addition, the other end parts of the collection pipes 23A, 23B areconnected to each one end part of tube members 26 (26A, 26B), which areexpandable and contractible, and flexible. The one end parts of thecollection passageways 24A, 24B are connected to the other end parts ofthe tube members 26A, 26B, and other end parts of the collectionpassageways 24A, 24B are connected to the liquid collection ports 22A,22B.

The liquid supply ports 12A, 12B that constitute the liquid supplymechanism 10 are provided sandwiching the projection area AR1 of theprojection optical system PL at a position respectively on both sides inthe X axial direction, and the liquid collection ports 22A, 22B thatconstitute the liquid collection mechanism 20 are provided on the outersides of the liquid supply ports 12A, 12B of the liquid supply mechanism10 with respect to the projection area AR1 of the projection opticalsystem PL. As depicted in FIG. 3, the projection area AR1 of theprojection optical system PL in the present embodiment is set to arectangular shape in a plan view, with the Y axial direction as thelongitudinal direction, and the X axial direction as the latitudinaldirection. For each of the liquid supply ports 12A, 12B, the Y axialdirection is the longitudinal direction, and both end parts thereof areslit shaped and bent inwardly.

For each of the liquid collection ports 22A, 22B, the Y axial directionis the longitudinal direction, and both end parts thereof are slitshaped and bent inwardly, and are provided so that they surround theliquid supply ports 12A, 12B and the projection area AR1.

The lower surface (liquid contact surface) 70A of the nozzle member 70is lyophilic (hydrophilic), the same as the liquid contact surface 2A ofthe optical element 2. In addition, the lower surface 70A of the nozzlemember 70 is substantially a flat surface, the lower surface 2A of theoptical element 2 is also a flat surface, and the lower surface 70A ofthe nozzle member 70 is substantially flush with the lower surface 2A ofthe optical element 2. Thereby, the immersion area AR2 can besatisfactorily formed over a large area.

The nozzle member 70 has a main body part 70B in which the supplypassageways 14 and the collection passageways 24 are formed, and aflange part 70T on the outer side of the main body part 70B. Inaddition, at the lower side step part 7 of the main column 1 is formed arecessed part 7H facing inwardly and capable of disposing the flangepart 70T of the nozzle member 70.

The vibration isolating mechanism 60 supports the nozzle member 70vibrationally isolated from the lower side step part 7 of the maincolumn 1, and has: an active vibration isolating mechanism 65 thatincludes a plurality of nozzle drive apparatuses 61 (61A-61C), 62 (62A),63 (63A-63C) that couples the recessed part 7H of the lower side steppart 7 and the flange part 70T of the nozzle member 70, and thatdynamically vibrationally isolates the nozzle member 70 from the lowerside step part 7 of the main column 1; and passive vibration isolatingmechanisms 72 (72A-72C) that support the flange part 70T of the nozzlemember 70 and passively vibrationally isolate it from a bottom surface7A of the recessed part 7H of the lower side step part 7.

The nozzle drive apparatuses 61-63 include, for example, voice coilmotors or linear motors driven by Lorentz's force. A voice coil motordriven by Lorentz's force has a coil part and a magnet part, and thecoil part and the magnet part are driven in a noncontact state.Consequently, it is possible to suppress the generation of vibrations byconstituting the nozzle drive apparatuses 61-63 with drive apparatusesdriven by Lorentz's force, such as voice coil motors.

In addition, the passive vibration isolating mechanisms 72 have, forexample, air springs (air cylinders, air bellows), and the like, and theelastic effect of the gas (air) supports and vibrationally isolates thenozzle member 70. In the present embodiment, a plurality (three) ofpassive vibration isolating mechanisms 72 (72A-72C) is provided so thatit surrounds the projection optical system PL, as depicted in FIG. 3.

In addition, the vibration isolating mechanism 60 supports the nozzlemember 70 in a state separated from the projection optical system PL(the optical element 2). By supporting the nozzle member 70 and theprojection optical system PL (the optical element 2) in a separatedstate, the vibrations generated by the nozzle member 70 are not directlytransmitted to the projection optical system PL.

In addition, the liquid supply mechanism 10 and the liquid collectionmechanism 20 are supported by a prescribed support mechanism isolatedfrom the lens barrel base plate 5. Thereby, vibrations generated by theliquid supply mechanism 10 and the liquid collection mechanism 20 arenot transmitted to the projection optical system PL via the lens barrelbase plate 5.

The active vibration isolating mechanism 65 has: the X drive apparatuses61 (61A-61C) that couple an inner side surface 7B on the X side of therecessed part 7H of the lower side step part 7 and the side surface onthe X side of the nozzle member 70, and that drive the nozzle member 70in the X axial direction with respect to the inner side surface 7B (thelower side step part 7); the Y drive apparatus 62 (62A) that couples theinner side surface 7B on the Y side of the recessed part 7H of the lowerside step part 7 and the side surface on the Y side of the nozzle member70, and that drives the nozzle member 70 in the Y axial direction withrespect to the inner side surface 7B (the lower side step part 7); andthe Z drive apparatuses 63 (63A-63C) that couple a ceiling surface 7C ofthe recessed part 7H of the lower side step part 7 and the upper surfaceof the nozzle member 70, and that drive the nozzle member 70 in the Zaxial direction with respect to the ceiling surface 7C (the lower sidestep part 7).

Each of the drive apparatuses 61-63 is connected to the controlapparatus CONT, and the control apparatus CONT controls the drive ofeach of the drive apparatuses 61-63.

In the present embodiment, the vibration isolating mechanism 60 has aplurality (three) of X drive apparatuses 61. Specifically, the vibrationisolating mechanism 60 has two X drive apparatuses 61A, 61B providedarrayed in the Y axial direction on the +X side of the nozzle member 70,and an X drive apparatus 61C provided on the −X side of the nozzlemember 70. The control apparatus CONT can move (translate) the nozzlemember 70 in the X axial direction by driving the plurality of X driveapparatuses 61A-61C with the same drive quantity.

In addition, the nozzle member 70 can move (rotate) in the θZ directionby driving the plurality of X drive apparatuses 61A-61C using mutuallydiffering drive quantities.

In addition, in the present embodiment, the vibration isolatingmechanism 60 has one Y drive apparatus 62. Specifically, the vibrationisolating mechanism 60 has the Y drive apparatus 62A provided on the −Yside of the nozzle member 70. The control apparatus CONT can move(translate) the nozzle member 70 in the Y axial direction by driving theY drive apparatus 62A.

In addition, in the present embodiment, the vibration isolatingmechanism 60 has a plurality (three) of Z drive apparatuses 63.Specifically, the vibration isolating mechanism 60 comprises three Zdrive apparatuses 63A, 63B, 63C provided on the +Z side of the nozzlemember 70 and provided so that they surround the projection opticalsystem PL. The control apparatus CONT can move (translate) the nozzlemember 70 in the Z axial direction by driving the plurality of Z driveapparatuses 63A-63C using the same drive quantity. In addition, thenozzle member 70 can be moved (rotated) in the θX direction and the θYdirection by driving the plurality of Z drive apparatuses 63A-63C usingmutually differing drive quantities.

Thus, the vibration isolating mechanism 60 can drive the nozzle member70 by the plurality of drive apparatuses 61-63 in the directions (Xaxis, Y axis, Z axis, θX, θY and θZ directions) of the six degrees offreedom.

Furthermore, in the present embodiment, the same number of passivevibration isolating mechanisms 72 (72A-72C) and Z drive apparatuses 63(63A-63C) are provided. In addition, as depicted in FIG. 3, the passivevibration isolating mechanisms 72A-72C and the Z drive apparatuses63A-63C are respectively disposed mutually adjacent.

Furthermore, the count and placement of the X drive apparatuses 61, theY drive apparatus 62, and the Z drive apparatuses 63 are arbitrarilysettable. For example, the Z drive apparatuses 63 may be provided sothat the lower surface of the flange part 70T of the nozzle member 70and the bottom surface 7A of a recessed part 7H of the lower side steppart 7 are coupled. Alternatively, one X drive apparatus 61 and two Ydrive apparatuses 62 may be provided. In other words, the nozzle member70 may be constituted using a plurality of drive apparatuses 61-63 sothat the nozzle member 70 can be driven in the directions of the sixdegrees of freedom.

In addition, the working points of the passive vibration isolatingmechanisms 72 (72A-72C) on the nozzle member 70 and the working pointsof the Z drive apparatuses 63 (63A-63C) on the nozzle member 70 arerespectively coincident in the XY plain, but the corresponding workingpoints may be set so that they are positioned on the same line (axis).

In addition, the exposure apparatus EX has a temperature regulatingsystem (a cooling system), which is not shown, that adjusts (cools) thetemperature of the drive apparatuses 61-63. Because the driveapparatuses 61-63 constitute heat generating sources, cooling by usingthe cooling system enables the suppression of fluctuations in theenvironment (the temperature) in which the exposure apparatus EX isplaced. Furthermore, the cooling system may cool by using the liquid LQfor the immersion exposure, and may also cool by using a prescribedcooling liquid (refrigerant) separate from the liquid LQ for theimmersion exposure.

In addition, the exposure apparatus EX has a nozzle position measuringinstrument 80 that measures the positional relationship between thelower side step part 7 of the main column 1 and the nozzle member 70. Inthe present embodiment, the nozzle position measuring instrument 80 haslaser interferometers. The nozzle position measuring instrument 80 has Xinterferometers 81 (81A, 81B) that measure the distance (the relativeposition) between the inner side surface 7B on the X side of therecessed part 7H of the lower side step part 7 and the side surface onthe X side of the nozzle member 70; a Y interferometer 82 (82A) thatmeasures the distance (the relative position) between the inner sidesurface 7B on the Y side of the recessed part 7H of the lower side steppart 7 and the side surface on the Y side of the nozzle member 70; and Zinterferometers 83 (83A-83C) that measure the distance (the relativeposition) between the ceiling surface 7C of the recessed part 7H of thelower side step part 7 and the upper surface of the nozzle member 70.Each of the interferometers 81-83 is connected to the control apparatusCONT, and the measurement result of each of the interferometers 81-83 isoutputted to the control apparatus CONT.

In the present embodiment, the nozzle position measuring instrument 80has a plurality (two) of X interferometers 81. Specifically, the nozzleposition measuring instrument 80 has two X interferometers 81A, 81Bprovided arrayed in the Y axial direction on the inner side surface 7Bon the +X side of the recessed part 7H of the lower side step part 7. Inaddition, reflecting surfaces 84A, 84B are provided at a positionrespectively opposing the X interferometers 81A, 81B on the side surfaceon the +X side of the nozzle member 70. Based on at least any one of themeasurement results of the X interferometers 81A, 81B, the controlapparatus CONT can derive the position of the nozzle member 70 in the Xaxial direction with respect to the lower side step part 7. In addition,based on the respective measurement results of the plurality of Xinterferometers 81A, 81B, the control apparatus CONT can derive theposition of the nozzle member 70 in the θZ direction with respect to thelower side step part 7.

In addition, in the present embodiment, the nozzle position measuringinstrument 80 has one Y interferometer 82. Specifically, the nozzleposition measuring instrument 80 has the Y interferometer 82A providedon the inner side surface 7B on the −Y side of the recessed part 7H ofthe lower side step part 7. In addition, a reflecting surface 85A isprovided at a position opposing the Y interferometer 82A on the sidesurface on the −Y side of the nozzle member 70. Based on the measurementresult of the Y interferometer 82A, the control apparatus CONT canderive the position of the nozzle member 70 in the Y axial directionwith respect to the lower side step part 7.

In addition, in the present embodiment, the nozzle position measuringinstrument 80 has a plurality (three) of Z interferometers 83.Specifically, the nozzle position measuring instrument 80 has Zinterferometers 83A, 83B provided arrayed in the X axial direction onthe ceiling surface 7C of the recessed part 7H of the lower side steppart 7, and a Z interferometer 83C provided at a position aligned in theY axial direction with respect to the Z interferometer 83B. In addition,reflecting surfaces 86A, 86B, 86C are provided at positions respectivelyopposing the Z interferometers 83A, 83B, 83C on the upper surface of thenozzle member 70. Based on at least any one measurement result of the Zinterferometers 83A, 83B, 83C, the control apparatus CONT can derive theposition of the nozzle member 70 in the Z axial direction with respectto the lower side step part 7. In addition, based on at least any twomeasurement results of the plurality of Z interferometers 83A, 83B, 83C,the control apparatus CONT can derive the position of the nozzle member70 in the θX direction and the θY direction with respect to the lowerside step part 7.

Thus, based on the measurement results of the plurality ofinterferometers 81-83, the control apparatus CONT can derive theposition of the nozzle member 70 with respect to the lower side steppart 7 (the main column 1) in the directions (X axis, Y axis, Z axis,θX, θY and θZ directions) of the six degrees of freedom.

The count and placement of the X interferometers 81, the Yinterferometer 82, and the Z interferometers 83 can be arbitrarily set.For example, the Z interferometers 83 may be provided so that theymeasure the distance (the relative position) between the lower surfaceof the flange part 70T of the nozzle member 70 and the bottom surface 7Aof the recessed part 7H of the lower side step part 7. Alternatively,one X interferometer 81 and two Y interferometers 82 may be provided. Inother words, it may be constituted so that the position of the nozzlemember 70 in the directions of the six degrees of freedom can bemeasured using the plurality of interferometers 81-83.

Furthermore, the nozzle position measuring instrument 80 is not limitedto interferometers, and it is also possible to use position measuringinstruments having another constitution, e.g., capacitance sensors,encoders, and the like.

In addition, the exposure apparatus EX has an accelerometer 90 thatmeasures the acceleration information of the nozzle member 70. In thepresent embodiment, the accelerometer 90 has X accelerometers 91 (91A,91B) that measure the acceleration of the nozzle member 70 in the Xaxial direction, a Y accelerometer 92 (92A) that measures theacceleration of the nozzle member 70 in the Y axial direction, and Zaccelerometers 93 (93A-93C) that measure the acceleration of the nozzlemember 70 in the Z axial direction.

Each of the accelerometers 91-93 is connected to the control apparatusCONT, and the measurement result of each of the accelerometers 91-93 isoutput to the control apparatus CONT.

In the present embodiment, the accelerometer 90 has a plurality (two) ofX accelerometers 91. Specifically, the accelerometer 90 has two Xaccelerometers 91A, 91B provided arrayed in the Y axial direction on theside surface on the +X side of the nozzle member 70. Based on at leastany one measurement result of the X accelerometers 91A, 91B, the controlapparatus CONT can derive the acceleration of the nozzle member 70 inthe X axial direction. In addition, based on the measurement results ofeach of the plurality of X accelerometers 91A, 91B, the controlapparatus CONT can derive the acceleration of the nozzle member 70 inthe θZ direction.

In addition, in the present embodiment, the accelerometer 90 has one Yaccelerometer 92. Specifically, the accelerometer 90 has a Yaccelerometer 92A provided on the side surface on the −Y side of thenozzle member 70. Based on the measurement result of the Y accelerometer92A, the control apparatus CONT can derive the acceleration of thenozzle member 70 in the Y axial direction.

In addition, in the present embodiment, the accelerometer 90 has aplurality (three) of Z accelerometers 93. Specifically, theaccelerometer 90 has Z accelerometers 93A, 93B provided arrayed in the Xaxial direction on the upper surface of the nozzle member 70, and a Zaccelerometer 93C provided at a position lined up with the Zaccelerometer 93B in the Y axial direction. Based on at least any onemeasurement result of the Z accelerometers 93A, 93B, 93C, the controlapparatus CONT can derive the acceleration of the nozzle member 70 inthe Z axial direction. In addition, based on at least any twomeasurement results of the plurality of Z accelerometers 93A, 93B, 93C,the control apparatus CONT can derive the acceleration of the nozzlemember 70 in the θX direction and the θY direction.

Thus, based on the measurement results of the plurality ofaccelerometers 91-93, the control apparatus CONT can derive theacceleration of the nozzle member 70 in the directions (X axis, Y axis,Z axis, θX, θY and θZ directions) of the six degrees of freedom.

In addition, the count and placement of the X accelerometers 91, the Yaccelerometer 92, and the Z accelerometers 93 can be arbitrarily set.For example, the Z accelerometers 93 can be provided at the lowersurface of the flange part 70T of the nozzle member 70. Alternatively,one X accelerometer 91 and two Y accelerometers 92 may be provided. Inother words, it may be constituted so that the acceleration of thenozzle member 70 can be measured in the directions of the six degrees offreedom using the plurality of accelerometers 91-93.

The following explains a method of exposing the pattern image of themask M onto the substrate P using the exposure apparatus EX having aconstitution as discussed above.

The control apparatus CONT projects and exposes the pattern image of themask M onto the substrate P via the projection optical system PL and theliquid LQ between the projection optical system PL and the substrate Pwhile moving the substrate stage PST that supports the substrate P inthe X axial direction (the scanning direction) as the liquid supplymechanism 10 supplies the liquid LQ onto the substrate P and, inparallel, the liquid collection mechanism 20 collects the liquid LQ onthe substrate P.

After the liquid LQ supplied from the liquid supply part 11 of theliquid supply mechanism 10 to form the immersion area AR2 is distributedthrough the supply pipes 13A, 13B and the tube members 16A, 16B, it issupplied onto the substrate P by the liquid supply ports 12A, 12B viathe supply passageways 14A, 14B formed inside the nozzle member 70. Theliquid LQ supplied onto the substrate P from the liquid supply ports12A, 12B is supplied so that it wetly spreads between the substrate Pand the lower end surface of the tip part (the optical element 2) of theprojection optical system PL, and locally forms the immersion area AR2,which is smaller than the substrate P and larger than the projectionarea AR1, on a part of the substrate P that includes the projection areaAR1. At this time, the control apparatus CONT simultaneously suppliesthe liquid LQ onto the substrate P from both sides of the projectionarea AR1 in the scanning direction respectively by the liquid supplyports 12A, 12B of the liquid supply mechanism 10 disposed on both sidesin the X axial direction (the scanning direction) of the projection areaAR1. Thereby, the immersion area AR2 is uniformly and satisfactorilyformed.

In addition, after the liquid LQ on the substrate P is collected by theliquid collection ports 22A, 22B of the nozzle member 70, it iscollected in the liquid collection part 21 via the collectionpassageways 24A, 24B, the tube members 26A, 26B, and the collectionpipes 23A, 23B. At this time, the control apparatus CONT can control theamount of liquid collected per unit of time by the liquid collectionpart 21, and just a prescribed quantity of liquid LQ on the substrate Pis collected per unit of time.

The exposure apparatus EX in the present embodiment projects and exposeson the substrate P the pattern image of the mask M while moving the maskM and the substrate P in the X axial direction (the scanning direction);during scanning exposure, the pattern image of one part of the mask M isprojected inside the projection area AR1 via the projection opticalsystem PL and the liquid LQ of the immersion area AR2, and, synchronizedto the movement of the mask M at a speed V in the −X direction (or the+X direction), the substrate P moves at a speed β (V (where (is theprojection magnification) in the +X direction (or the −X direction) withrespect to the projection area AR1. A plurality of shot regions are seton the substrate P; after the exposure of one shot region is completed,the next shot region moves to the scanning start position by thestepping movement of the substrate P, and the scanning exposure processis subsequently performed sequentially for each shot region while movingthe substrate P by the step-and-scan system.

Vibrations may be produced by the nozzle member 70 due to the supply andcollection of the liquid LQ. In addition, the vibration componentproduced by the substrate P side due to the movement of the substratestage PST in the XY direction to perform scanning and exposure, and duethe movement in the Z axial direction and the inclined directions (θX,θY directions) to perform focus leveling adjustment, may be transmittedto the nozzle member 70 via the liquid LQ of the immersion area AR2. Inaddition, it is also conceivable that the viscous resistance of theliquid LQ in the immersion area AR2 may move the nozzle member 70 whenscanning the substrate P. In other words, there is also a possibilitythat the liquid LQ of the immersion area AR2 may exert a force on thenozzle member 70.

Because the lower side step part 7 (the main column 1) that supports thenozzle member 70 also supports the projection optical system PL, thereis a possibility that vibrations produced by the nozzle member 70 willbe transmitted to the projection optical system PL. If vibrationsproduced by the nozzle member 70 are transmitted to the projectionoptical system PL, then the pattern image projected onto the substrateP, via the projection optical system PL and the liquid LQ, will degrade.Therefore, the control apparatus CONT uses the vibration isolatingmechanism 60 to vibrationally isolate the vibrations of the nozzlemember 70 so that they do not transmit to the projection optical systemPL.

When the nozzle member 70 vibrates, the position of the nozzle member 70with respect to the lower side step part 7 of the main column 1fluctuates, and the control apparatus CONT therefore drives the driveapparatuses 61-63 of the vibration isolating mechanism 60 based on themeasurement results of the nozzle position measuring instrument 80. Thenozzle position measuring instrument 80 measures the position of thenozzle member 70 with respect to the lower side step part 7. Based onthe measurement result of the nozzle position measuring instrument 80,the control apparatus CONT drives the drive apparatuses 61-63 of thevibration isolating mechanism 60 so that the position of the nozzlemember 70 with respect to the lower side step part 7 is maintained in adesired state, i.e., so that the positional relationship between thelower side step part 7 and the nozzle member 70 is fixedly maintained.

At this time, the control apparatus CONT performs arithmetic processingbased on the measurement result of each of the X, Y, Z positionmeasuring instruments 81, 82, 83, and derives each position informationof the nozzle member 70 with respect to the lower side step part 7 inthe directions (X axis, Y axis, Z axis, θX, θY and θZ directions) of thesix degrees of freedom. Based on the position information derived abovefor the directions of the six degrees of freedom, the control apparatusCONT controls each position of the nozzle member 70 with respect to thelower side step part 7 in the directions (X axis, Y axis, Z axis, θX, θYand θZ directions) of the six degrees of freedom by driving each of theX, Y, Z drive apparatuses 61, 62, 63.

In addition, because the nozzle member 70 is supported by the passivevibration isolating mechanisms 72, including air springs, the elasticeffect of the gas of those air springs can reduce the high frequencycomponent of the vibrations attempting to transmit from the nozzlemember 70 side to the lower side step part 7. Furthermore, the activevibration isolating mechanism 65, which includes the drive apparatuses61-63, reduces the comparatively low frequency component (e.g., 1-10 Hz)of the vibrations, and the vibration isolating mechanism 60 cantherefore obtain the effect of eliminating vibrations in a broadfrequency band. Thus, by combining active vibration isolation (dynamicvibration isolation) using the drive apparatuses 61-63 with passivevibration isolation (passive vibration isolation) using the elasticaction of gas, it is possible to effectively suppress the transmissionof the vibrations acting on the nozzle member 70 to the projectionoptical system PL via the lower side step part 7. In addition, becauseit is conceivable that the extremely low frequency component (e.g., thefrequency component below 1 Hz) of the vibration components of thenozzle member 70 will have little impact on the accuracy of transferringthe pattern onto the substrate P, a control system for the vibrationisolating mechanism 60 can be constructed so that it does not controlthe isolation of vibrations for that frequency component. Doing soprevents disadvantages, such as the oscillation of the control system,and makes it possible to construct the control system with acomparatively simple constitution.

As explained above, the vibration isolating mechanism 60 can prevent thetransmission of vibrations produced by the nozzle member 70 to theprojection optical system PL via the lower side step part 7 (the maincolumn 1). Accordingly, it is possible to prevent degradation of thepattern image projected onto the substrate P via the projection opticalsystem PL and the liquid LQ.

In addition, the vibration isolating mechanism 60 supports the nozzlemember 70 in a state separated from the projection optical system PL(the optical element 2). By supporting the nozzle member 70 and theprojection optical system PL (the optical element 2) in a separatedstate, vibrations generated by the nozzle member 70 are not directlytransmitted to the projection optical system PL.

In addition, a prescribed support mechanism supports the liquid supplymechanism 10 and the liquid collection mechanism 20 isolated from thelens barrel base plate 5. Thereby, vibrations generated by the liquidsupply mechanism 10 and the liquid collection mechanism 20 are nottransmitted to the projection optical system PL via the lens barrel baseplate 5.

In addition, in the present embodiment, the supply pipes 13A, 13B andthe supply passageways 14A, 14B of the nozzle member 70 are connectedvia the tube members 16A, 16B, which are expandable and contractible,and flexible. Likewise, the collection pipes 23A, 23B and the collectionpassageways 24A, 24B of the nozzle member are connected via the tubemembers 26A, 26B, which are expandable and contractible, and flexible.Consequently, they do not interfere with the drive of the nozzle member70 even when the nozzle member 70 is driven using the drive apparatuses61-63. Accordingly, the vibration isolating mechanism 60 cansatisfactorily support the nozzle member 70 and vibrationally isolate itfrom the lower side step part 7.

In addition, a constitution is conceivable in which a reference mirror(a fixed mirror) of a interferometer system for measuring the positioninformation of the substrate stage PST is affixed to the lens barrel PKof the projection optical system PL; however, the measurement of theposition information of the substrate stage PST and the control of theposition based on the measurement result thereof can be performed withgood accuracy, even if the reference mirror (the fixed mirror) of theinterferometer system for measuring the position information of thesubstrate stage PST is affixed to the lens barrel PK so that vibrationsare not transmitted to the projection optical system PL.

In addition, as discussed above, there is a possibility that the liquidLQ of the immersion area AR2 will exert a force on the nozzle member 70,and there is also a possibility that that force will fluctuate theposition of the nozzle member 70 and that the liquid LQ willunfortunately be supplied and collected in a state wherein the nozzlemember 70 is not disposed at the optimal position with respect to theprojection area AR1 or the immersion area AR2 of the substrate P. Inthat case, the control apparatus CONT can supply and collect the liquidLQ for forming the immersion area AR2 in a state wherein the nozzlemember 70 is disposed at the optimal position by using the driveapparatuses 61-63 of the vibration isolating mechanism 60 to adjust thepositional relationship between the lower side step part 7 (the maincolumn 1) and the nozzle member 70. Accordingly, the immersion area AR2can be satisfactorily formed and immersion exposure can be performedwith good accuracy.

In addition, the control apparatus CONT can adjust the position of thenozzle member 70 using the drive apparatuses 61-63. Consequently, tocollect the liquid LQ on the substrate P (on the substrate stage PST),for example, after the completion of the immersion exposure of thesubstrate P, it is also possible to collect the liquid in a state inwhich the nozzle member 70 moves in the −Z direction (the downwarddirection), and the liquid collection ports 22 of the nozzle member 70approach the substrate P.

Alternatively, it is also possible to use the drive apparatuses 61-63 toadjust the positional relationship between the substrate P and thenozzle member 70, including the distance between the surface of thesubstrate P and the lower surface 70A of the nozzle member 70, inresponse to the immersion scanning conditions (the scanning speed of thesubstrate P, the physical property (viscosity) of the liquid LQ, and thelike), and then perform immersion exposure. In addition, contact betweenthe nozzle member 70 and the substrate P, or between the nozzle member70 and the substrate stage PST, may also be prevented by, when thenozzle member 70 is not being used, moving the nozzle member 70 inadvance in the +Z direction (upward direction).

Furthermore, in the present embodiment discussed above, the controlapparatus CONT drives the drive apparatuses 61-63 based on themeasurement result from the nozzle position measuring instrument 80 sothat the vibrations of the nozzle member 70 are not transmitted to theprojection optical system PL via the lower side step part 7; however,the control apparatus CONT may also drive the drive apparatuses 61-63based on the measurement result of the accelerometer 90. At this time,the control apparatus CONT performs arithmetic processing based on themeasurement result of each of the X, Y, Z accelerometers 91, 92, 93, andderives acceleration information of the nozzle member 70 in thedirections (X axis, Y axis, Z axis, θX, θY and θZ directions) of the sixdegrees of freedom. The control apparatus CONT suppresses the vibrationcomponents of the nozzle member 70 in the directions (X axis, Y axis, Zaxis, θX, θY and θZ directions) of the six degrees of freedom by drivingeach of the X, Y, Z drive apparatuses 61, 62, 63 based on theacceleration information derived above in the directions of the sixdegrees of freedom.

In addition, the control apparatus CONT may also drive the driveapparatuses 61-63 taking into consideration both the measurement resultof the nozzle position measuring instrument 80 and the measurementresult of the accelerometer 90.

In addition, it is possible to constitute the vibration isolatingmechanism 60 with just the passive vibration isolating mechanisms 72without providing the active vibration isolating mechanism 65, and it isalso possible to constitute it by just the active vibration isolatingmechanism 65 without providing the passive vibration isolatingmechanisms 72.

Furthermore, in the present embodiment discussed above, the nozzlemember 70 has both the liquid supply ports 12 and the liquid collectionports 22, but a nozzle member (a supply nozzle) having the liquid supplyports 12 and a nozzle member (a collection nozzle) having the liquidcollection ports 22 may be separately provided. In this case, thevibration isolating mechanism (adjustment mechanism) 60 may be providedwith both the supply nozzle and the collection nozzle, or may beprovided with any one thereof.

Furthermore, in the present embodiment discussed above, the positionalcontrol of the nozzle member 70 (the control of the active vibrationalisolation from the lower side step part 7) is accomplished by feedbackcontrol based on the result of measuring the position of the nozzlemember 70 by the position measuring instrument 80; however, in thatcase, there is the possibility of control delays. Therefore, it is alsopossible to perform active vibrational isolation by employingfeedforward control, in which, physical quantities related to thebehavior of the exposure apparatus EX and the liquid LQ during scanningexposure are derived prior to performing the exposure, and the attitudeof the nozzle member 70 is controlled by driving the drive apparatuses61-63 during exposure based on those derived physical quantities.

Furthermore, it is also possible to combine feedback control andfeedforward control.

If performing feedforward control, then a test exposure is performedbeforehand and a plurality of physical quantities is derived. Namely, anidentification test is performed on the system of the exposure apparatusEX, and the dynamic characteristics, including the physical quantitiesof that system, are derived. In the identification test, the liquid LQis supplied and collected by the liquid supply mechanism 10 and theliquid collection mechanism 20 via the liquid supply ports 12 and theliquid collection ports 22 of the nozzle member 70, the substrate stagePST is scanned in a state in which the immersion area AR2 is formedbetween the substrate P and the optical element 2, and between thesubstrate P and the nozzle member 70, and the physical quantities aredetected using the nozzle position measuring instrument 80. Furthermore,the drive apparatuses 61-63 are, of course, not driven during theidentification test. The physical quantities detected include: the timeduring the exposure sequence; the position, speed, and acceleration ofthe substrate P; the position, speed, and acceleration of the nozzlemember 70; the relative position, the relative speed, and the relativeacceleration between the nozzle member 70 and the substrate P; and thelike. The position, speed, and acceleration values are detected for allX axis, Y axis, Z axis, θX, θY and θZ directions (six degrees offreedom). Furthermore, the physical quantities detected include thequantity (volume and mass) and physical quantities (viscosity and thelike) of the liquid LQ supplied. The plurality of physical quantitiesdetected by the identification test is stored in the control apparatusCONT. Based on the detected physical quantities, the control apparatusCONT determines the control quantities for driving the drive apparatuses61-63, and performs the exposure while driving the drive apparatuses61-63 based on those determined physical quantities so that the nozzlemember 70 is vibrationally isolated from the lower side step part 7.Thus, the control apparatus CONT can use the drive apparatuses 61-63 toperform vibrational isolation in accordance with the dynamiccharacteristics (operation) of the exposure apparatus EX itself, and canmaintain the positional relationship between the lower side step part 7and the nozzle member 70 in the desired state.

The following explains another embodiment of the present invention. Inthe explanation below, constituent parts that are identical orequivalent to those in the embodiments discussed above are assigned theidentical reference characters, and the explanation thereof issimplified or omitted.

FIG. 4 depicts another embodiment of the present invention. In FIG. 4,the exposure apparatus EX has a nozzle position measuring instrument 100that measures the positional relationship between the nozzle member 70and the projection optical system PL supported by the lower side steppart 7 of the main column 1. The nozzle position measuring instrument100 has: X interferometers 101 (101A, 101B) that measure the positionalrelationship between the projection optical system PL and the nozzlemember 70 in the X axial direction; a Y interferometer 102 (however, notdepicted in FIG. 4) that measures the positional relationship betweenthe projection optical system PL and the nozzle member 70 in the Y axialdirection; and Z interferometers 103 (103A-103C) (however, 103C is notdepicted in FIG. 4) that measure the positional relationship between theprojection optical system PL and the nozzle member 70 in the Z axialdirection. Each of the interferometers 101-103 are affixed to the lensbarrel PK of the projection optical system PL. Each of theinterferometers 101-103 are connected to the control apparatus CONT, andthe measurement result from each of the interferometers 101-103 isoutputted to the control apparatus CONT.

Based on the measurement result of the plurality of interferometers101-103, the control apparatus CONT can derive the position of thenozzle member 70 with respect to the projection optical system PL (thelens barrel PK) in the directions (X axis, Y axis, Z axis, θX, θY and θZdirections) of the six degrees of freedom. The control apparatus CONTdrives the drive apparatuses 61-63 based on the derived positioninformation mentioned above so that the vibrations of the nozzle member70 do not transmit to the projection optical system PL. Alternatively,the control apparatus CONT adjusts the positional relationship betweenthe projection optical system PL and the nozzle member 70 by driving thedrive apparatuses 61-63 based on the derived position informationmentioned above.

FIG. 5 depicts another embodiment of the present invention. In FIG. 5,the exposure apparatus EX has a nozzle position measuring instrument 110that measures the positional relationship between the substrate stagePST and the nozzle member 70. The nozzle position measuring instrument110 has: X interferometers 111 (111A, 111B) that measure the positionalrelationship between the substrate stage PST and the nozzle member 70 inthe X axial direction; a Y interferometer 112 (however, not depicted inFIG. 5) that measures the positional relationship between the substratestage PST and the nozzle member 70 in the Y axial direction; and Zinterferometers 113 (113A-113C) (however, 113C is not depicted in FIG.5) that measures the positional relationship between the substrate stagePST and the nozzle member 70 in the Z axial direction. Each of theseinterferometers 111-113 is affixed at a prescribed position to thesubstrate stage PST so that it does not interfere with the exposureprocess. In FIG. 5, each of the interferometers 111-113 is affixed tothe side surface of the substrate stage PST. Each of the interferometers111-113 is connected to the control apparatus CONT, and the measurementresult of each of the interferometers 111-113 is outputted to thecontrol apparatus CONT.

Based on the measurement results of the plurality of interferometers111-113, the control apparatus CONT can derive the position of thenozzle member 70 with respect to the substrate stage PST in thedirections (X axis, Y axis, Z axis, θX, θY and θZ directions) of the sixdegrees of freedom. The control apparatus CONT adjusts the positionalrelationship between the substrate stage PST and the nozzle member 70 bydriving the drive apparatuses 61-63 based on the derived positioninformation mentioned above.

As discussed above, the liquid LQ in the present embodiment comprisespure water. Pure water is advantageous because it can be easily obtainedin large quantities at a semiconductor fabrication plant, and the like,and because pure water has no adverse impact on the optical element(lens), the photoresist on the substrate P, and the like. In addition,because pure water has no adverse impact on the environment and has anextremely low impurity content, it can also be expected to have theeffect of cleaning the surface of the substrate P, and the surface ofthe optical element provided on the tip surface of the projectionoptical system PL. Furthermore, the exposure apparatus may be providedwith an ultrapure water manufacturing apparatus if the purity of thepure water supplied from the plant, and the like, is low.

Further, the refractive index n of pure water (water) for the exposurelight EL having a wavelength of approximately 193 nm is said to besubstantially 1.44; therefore, the use of ArF excimer laser light (193nm wavelength) as the light source of the exposure light EL wouldshorten the wavelength on the substrate P to 1/n, i.e., approximately134 nm, thereby obtaining a high resolution. Furthermore, because thedepth of focus will increase approximately n times, i.e., approximately1.44 times, that of in air, the numerical aperture of the projectionoptical system PL can be further increased if it is preferable to ensurea depth of focus approximately the same as that when used in air, andthe resolution is also improved from this standpoint.

Furthermore, the numerical aperture NA of the projection optical systemmay become 0.9-1.3 if the liquid immersion method as discussed above isused. If the numerical aperture NA of such a projection optical systemincreases, then random polarized light conventionally used as theexposure light will degrade imaging performance due to the polarizationeffect, and it is therefore preferable to use polarized illumination. Inthat case, it is better to illuminate with linearly polarized lightaligned in the longitudinal direction of the line pattern of theline-and-space pattern of the mask (the reticle), and to emit a largeamount of diffracted light of the S polarized light component (the TEpolarized light component) i.e., the polarized light direction componentaligned in the longitudinal direction of the line pattern, from thepattern of the mask (the reticle). If a liquid is filled between theprojection optical system PL and the resist coated on the surface of thesubstrate P, then the transmittance through the resist surface increasesfor the diffracted light of the S polarized light component (the TEpolarized light component), which contributes to the improvement of thecontrast, compared with the case in which air (a gas) is filled betweenthe projection optical system PL and the resist coated on the surface ofthe substrate P, and a high imaging performance can consequently beobtained even if the numerical aperture NA of the projection opticalsystem exceeds 1.0. In addition, it is further effective toappropriately combine a phase shift mask and the oblique incidenceillumination method (particularly the dipole illumination method)aligned in the longitudinal direction of the line pattern, as disclosedin Japanese Published Patent Application No. H06-188169. For example, ina case where a half tone phase shift mask (a pattern with anapproximately 45 nm half pitch) having a transmittance of 6% isilluminated using the linear polarized light illumination method and thedipole illumination method in parallel, then the depth of focus (DOF)can be increased by approximately 150 μm more than when using randompolarized light if the illumination a stipulated by the circumscribedcircle of the dual beam that forms the dipole in the pupil plane of theillumination system is 0.95, the radius of each beam in that pupil planeis 0.125 (, and the numerical aperture NA of the projection opticalsystem PL is 1.2.

In addition, if a fine line-and-space pattern (e.g., a line-and-space ofapproximately 25-50 nm) is exposed on the substrate P using, forexample, an ArF excimer laser as the exposure light and using aprojection optical system PL having a reduction magnification ofapproximately ¼, then the structure of the mask M (e.g., the fineness ofthe pattern and the thickness of the chrome) causes the mask M to act asa polarizing plate due to the wave guide effect, and a large amount ofdiffracted light of the S polarized light component (the TE polarizedlight component) from the diffracted light of the P polarized lightcomponent (the TM polarized light component), which decreases contrast,is emitted from the mask M. In this case, it is preferable to use thelinear polarized light illumination discussed above; however, even ifthe mask M is illuminated with random polarized light, a high resolutionperformance can be obtained even if the numerical aperture NA of theprojection optical system PL is as large as 0.9-1.3.

In addition, if exposing an ultrafine line-and-space pattern of a mask Monto a substrate P, then there is also a possibility that the Ppolarized light component (the TM polarized light component) will becomegreater than the S polarized light component (the TE polarized lightcomponent) due to the wire grid effect; however, because a greaterquantity of diffracted light of the S polarized light component (the TEpolarized light component) than the diffracted light of the P polarizedlight component (the TM polarized light component) is emitted from themask M if a line-and-space pattern larger than 25 nm is exposed onto thesubstrate P using, for example, an ArF excimer laser as the exposurelight and using a projection optical system PL having a reductionmagnification of approximately ¼, then a high imaging performance can beobtained even if the numerical aperture NA of the projection opticalsystem PL is as large as 0.9-1.3.

Furthermore, instead of just linear polarized light illumination (Spolarized light illumination) aligned in the longitudinal direction ofthe line pattern of the mask (the reticle), it is also effective tocombine the oblique incidence illumination method with the polarizedlight illumination method that linearly polarizes light in a directiontangential (circumferential) to a circle with the optical axis at thecenter, as disclosed in Japanese Published Patent Application No.H06-53120. In particular, if the mask (reticle) pattern mixes linepatterns extending in a plurality of differing directions instead of aline pattern extending in a prescribed single direction, then bycombining the use of the zonal illumination method with the polarizedlight illumination method that linearly polarizes light in a directiontangential to a circle having the optical axis at its center, aslikewise disclosed in Japanese Published Patent Application No.H06-53120, it is possible to achieve high imaging performance even ifthe numerical aperture NA of the projection optical system is large. Forexample, if illuminating a half tone phase shift mask (pattern with anapproximately 63 nm half pitch) having a transmittance of 6% bycombining the use of the zonal illumination method (3/4 zonal ratio)with the polarized light illumination method that linearly polarizeslight in a direction tangential to a circle with the optical axis at itscenter, then the depth of focus (DOF) can be increased by approximately250 nm more than when using random polarized light if the illumination ais 0.95 and the numerical aperture NA of the projection optical systemPL is 1.00, and the depth of focus can be increased by approximately 100nm if the numerical aperture NA of the projection optical system is 1.2with a pattern having an approximately 55 nm half pitch.

In the present embodiment, the optical element 2 is affixed at the tipof the projection optical system PL, and the optical characteristics ofthe projection optical system PL, e.g., aberrations (sphericalaberration, coma aberration, and the like) can be adjusted by this lens.Furthermore, the optical element affixed to the tip of the projectionoptical system PL may also be an optical plate used to adjust theoptical characteristics of the projection optical system PL.Alternatively, it may be a plane parallel plate capable of transmittingthe exposure light EL therethrough.

Furthermore, if a high pressure is generated by the flow of the liquidLQ between the substrate P and the optical element at the tip of theprojection optical system PL, then instead of making the optical elementreplaceable, the optical element may be firmly fixed by that pressure sothat it does not move.

Furthermore, the present embodiment is constituted so that the liquid LQis filled between the projection optical system PL and the surface ofthe substrate P, but may be constituted so that the liquid LQ is filledin a state wherein in which, for example, a cover glass comprising beinga plane parallel plate is affixed to the surface of the substrate P.

Furthermore, although the liquid LQ in the present embodiment is water,it may be a liquid other than water; for example, if the light source ofthe exposure light EL is an F2 laser, then this F2 laser light will nottransmit through water, so it would be acceptable to use as the liquidLQ a fluorine based fluid, such as perfluorinated polyether (PFPE) orfluorine based oil, that is capable of transmitting the F2 laser light.In this case, the portion that makes contact with the liquid LQ istreated to make it lyophilic by forming a thin film with a substancehaving a molecular structure that contains fluorine and that has a smallpolarity. In addition, it is also possible to use as the liquid LQ one(e.g., cedar oil) that is transparent to the exposure light EL, has thehighest possible refractive index, and is stable with respect to theprojection optical system PL and the photoresist coated on the surfaceof the substrate P. In this case, the surface is treated according tothe polarity of the liquid LQ used.

Furthermore, the substrate P in each of the abovementioned embodimentsis not limited to a semiconductor wafer for fabricating semiconductordevices, and is also applicable to a glass substrate for a displaydevice, a ceramic wafer for a thin film magnetic head, or a mask or theoriginal plate of a reticle (synthetic quartz, silicon wafer) used by anexposure apparatus, and the like.

In addition to a step-and-scan system scanning type exposure apparatus(scanning stepper) that scans and exposes the pattern of the mask M bysynchronously moving the mask M and the substrate P, a step-and-repeatsystem projection exposure apparatus (stepper) that exposes the fullpattern of the mask M with the mask M and the substrate P in astationary state and sequentially steps the substrate P is alsoapplicable as the exposure apparatus EX. In addition, the presentinvention is also applicable to a step-and-stitch system exposureapparatus that partially and superimposingly transfers at least twopatterns onto the substrate P.

In addition, the present invention is also applicable to an exposureapparatus that employs a full wafer exposure system that exposes areduced image of a first pattern onto the substrate P using a projectionoptical system (e.g., a refraction type projection optical system with a⅛ reduction magnification and that does not include a reflectingelement) in a state in which the first pattern and the substrate P aresubstantially stationary. In this case, the present invention can alsobe applied to a stitching full-wafer exposure apparatus thatsubsequently further uses that projection optical system to perform afull-wafer exposure of the reduced image of a second pattern, in a statein which the second pattern and the substrate P are substantiallystationary, onto the substrate P, partially overlapping the firstpattern.

The present invention is also applicable to a twin stage type exposureapparatus as recited in, for example, Japanese Published PatentApplication No. H10-163099, Japanese Published Patent Application No.H10-214783, and the corresponding U.S. Pat. No. 6,400,441; and toPublished Japanese translation of PCT (WO) 2000-505958, and thecorresponding U.S. Pat. No. 5,969,441 and U.S. Pat. No. 6,262,796. Thedisclosures of the abovementioned publications and the U.S. Patents arehereby incorporated by reference in their entirety to the extentpermitted by the national laws and regulations of the designated states(or elected states) designated by the present international patentapplication.

In addition, the present invention is also applicable to an exposureapparatus having an exposure stage capable of holding and moving asubstrate to be processed, such as a wafer, and a measurement stagehaving various measuring members and sensors, as disclosed in JapanesePublished Patent Application No. H11-135400. The disclosure of theabovementioned publication and the corresponding U.S. Patent are herebyincorporated by reference in their entirety to the extent permitted bythe national laws and regulations of the designated states (or electedstates) designated by the present international patent application.

In the present embodiment discussed above, a light transmitting typemask that forms a prescribed shielding pattern (or a phase pattern, or adimming pattern) onto a substrate having light transmittingcharacteristics, or a light reflection type mask that forms a prescribedreflected pattern onto a substrate having light reflection propertieswas used, but the present invention is not limited thereto. For example,instead of such a mask, an electronic mask (one type of optical system)may be used that forms a transmittance pattern or a reflected patternbased on digital data of the pattern to be exposed, or that forms alight emitting pattern. Such an electronic mask is disclosed in, forexample, U.S. Pat. No. 6,778,257. The disclosure of the abovementionedU.S. Patent is hereby incorporated by reference in its entirety to theextent permitted by the national laws and regulations of the designatedstates (or elected states) designated by the present internationalpatent application. Furthermore, the electronic mask discussed above isa concept that includes both a non-emissive type image display deviceand a self luminous type image display device.

In addition, the present invention is also applicable to an exposureapparatus that performs an exposure, called a double beam interferenceexposure, that exposes a substrate with the interference fringesproduced by the interference of a plurality of beams. Such an exposuremethod and an exposure apparatus are disclosed in, for example, thepamphlet of International Publication WO 01/35168. The disclosure of theabovementioned pamphlet is hereby incorporated by reference in itsentirety to the extent permitted by the national laws and regulations ofthe designated states (or elected states) designated by the presentinternational patent application.

In addition, in the embodiments discussed above, an exposure apparatusis used that locally fills liquid between the projection optical systemPL and the substrate P, but the present invention is also applicable toa liquid immersion exposure apparatus that moves a stage, which holdsthe substrate to be exposed, in a liquid bath, as well as to a liquidimmersion exposure apparatus that forms a liquid bath having aprescribed depth on the stage, and holds the substrate therein. Thestructure and exposure operation of the immersion exposure apparatusthat moves the stage that holds the substrate to be exposed in theliquid bath is disclosed in, for example, Japanese Published PatentApplication No. H06-124873, and the immersion exposure apparatus thatforms a liquid bath of a prescribed depth on the stage and holds thesubstrate therein is disclosed in, for example, Japanese PublishedPatent Application No. H10-303114 and U.S. Pat. No. 5,825,043. Thedisclosures of the abovementioned publications and the U.S. Patent arehereby incorporated by reference in their entirety to the extentpermitted by the national laws and regulations of the designated states(or elected states) designated by the present international patentapplication.

In addition, the exposure apparatus in which the liquid immersion methoddiscussed above is applied is constituted to fill a liquid (pure water)in the space of the optical path on the emission side of the terminaloptical member of the projection optical system PL, and then expose awafer W (the substrate P), but may be constituted so that it fills aliquid (pure water) also in the space of the optical path on theincident side of the terminal optical member of the projection opticalsystem, as disclosed in the pamphlet of International Publication WO2004/019128. The disclosure of the above cited pamphlet is herebyincorporated by reference in its entirety to the extent permitted by thenational laws and regulations of the designated states (or electedstates) designated by the present international patent application.

The type of exposure apparatus EX is not limited to semiconductor devicefabrication exposure apparatuses that expose the pattern of asemiconductor device on the substrate P, but is also widely applicableto exposure apparatuses for fabricating liquid crystal devices ordisplays, exposure apparatuses for fabricating thin film magnetic heads,imaging devices (CCD), or reticles and masks, and the like.

If a linear motor is used in the substrate stage PST or the mask stageMST (refer to U.S. Pat. No. 5,623,853 and U.S. Pat. No. 5,528,118), theneither an air levitation type that uses an air bearing or a magneticlevitation type that uses Lorentz's force or reactance force may beused. In addition, each of the stages PST, MST may be a type that movesalong a guide, or may be a guideless type not provided with a guide. Thedisclosure of the above cited U.S. Patent is hereby incorporated byreference in its entirety to the extent permitted by the national lawsand regulations of the designated states (or elected states) designatedby the present international patent application.

For the drive mechanism of each of the stages PST, MST, a planar motormay be used that opposes a magnet unit in which magnets are arranged twodimensionally to an armature unit in which coils are arranged twodimensionally, and drives each of the stages PST, MST by electromagneticforce. In this case, any one among the magnet unit and the armature unitis connected to the stages PST, MST, and the other one of the magnetunit and the armature unit should be provided on the moving surface sideof the stages PST, MST.

The reaction force generated by the movement of the substrate stage PSTmay be mechanically discharged to the floor (ground) using a framemember so that it is not transmitted to the projection optical systemPL, as recited in Japanese Published Patent Application No. H08-166475,and the corresponding U.S. Pat. No. 5,528,118. The disclosures of theabove cited publication and U.S. Patent are hereby incorporated byreference in their entireties to the extent permitted by the nationallaws and regulations of the designated states (or elected states)designated by the present international patent application.

In addition, the reaction force generated by the movement of the maskstage MST may be mechanically discharged to the floor (ground) using aframe member so that it is not transmitted to the projection opticalsystem PL, as recited in Japanese Published Patent Application No.H08-330224, and the corresponding U.S. Pat. No. 5,874,820. Thedisclosures of the above cited publication and U.S. Patent are herebyincorporated by reference in their entireties to the extent permitted bythe national laws and regulations of the designated states (or electedstates) designated by the present international patent application.

The exposure apparatus EX of the embodiments in the present applicationas described above is manufactured by assembling various subsystems,including each constituent element recited in the claims of the presentapplication, so that a prescribed mechanical accuracy, electricalaccuracy, and optical accuracy are maintained. To ensure these variousaccuracies, adjustments are performed before and after this assembly,including an adjustment to achieve optical accuracy for the variousoptical systems, an adjustment to achieve mechanical accuracy for thevarious mechanical systems, and an adjustment to achieve electricalaccuracy for the various electrical systems. The assembly process, fromthe various subsystems to the exposure apparatus includes the mutualmechanical connection of the various subsystems, the wiring andconnection of electrical circuits, the piping and connection of theatmospheric pressure circuit, and the like. Naturally, before theprocess of assembling from these various subsystems to the exposureapparatus, there are processes for assembling each of the individualsubsystems. When the assembly process from various subsystems to theexposure apparatus has completed, a comprehensive adjustment isperformed to ensure the various accuracies of the exposure apparatus asa whole. Furthermore, it is preferable to manufacture the exposureapparatus in a clean room wherein the temperature, the cleanlinesslevel, and the like, are controlled.

As shown in FIG. 6, a micro-device, such as a semiconductor device ismanufactured by: a step 201 that designs the functions and performanceof the micro-device; a step 202 that fabricates a mask (reticle) basedon this design step; a step 203 that fabricates a substrate, which isthe base material of the device; a substrate processing step 204 inwhich the exposure apparatus EX of the embodiments discussed aboveexposes a pattern of the mask onto the substrate; a device assemblingstep 205 (having a dicing process, a bonding process, and a packagingprocess); a scanning step 206; and the like.

1. An exposure method comprising: providing a substrate such that thesubstrate is opposite to an optical member of an optical system and anozzle member having at least any one of a supply outlet that supplies aliquid and a collection inlet that collects a liquid; measuring aposition of the nozzle member; rotating the nozzle member around an axisperpendicular to an optical axis of the optical system based on themeasured position of the nozzle member; and exposing the substrate withan exposure beam through the optical system and the liquid.
 2. Anexposure method according to claim 1, wherein the measured position ofthe nozzle member includes a position around the axis perpendicular tothe optical axis.
 3. An exposure method according to claim 1, whereinthe measured position of the nozzle member includes a position in adirection parallel to the optical axis.
 4. An exposure method accordingto claim 3, further comprising moving the nozzle member in the directionparallel to the optical axis based on the measured position.
 5. Anexposure method according to claim 1, wherein the measured position ofthe nozzle member includes a position in a direction perpendicular tothe optical axis.
 6. An exposure method according to claim 5, furthercomprising moving the nozzle member in the direction perpendicular tothe optical axis based on the measured position.
 7. An exposure methodaccording to claim 1, wherein the measured position of the nozzle memberincludes a position around the optical axis.
 8. An exposure methodaccording to claim 7, further comprising rotating the nozzle memberaround the optical axis based on the measured position.
 9. An exposuremethod according to claim 1, wherein the nozzle member is moved under afeed-back control based on the measured position.
 10. An exposure methodaccording to claim 9, wherein the nozzle member is moved under afeed-forward control.
 11. A device fabricating method comprising:providing a substrate such that the substrate is opposite to an opticalmember of an optical system and a nozzle member having at least any oneof a supply outlet that supplies a liquid and a collection inlet thatcollects a liquid; measuring a position of the nozzle member; rotatingthe nozzle member around an axis perpendicular to an optical axis of theoptical system based on the measured position of the nozzle member;exposing the substrate with an exposure beam through the optical systemand the liquid; and processing the exposed substrate.
 12. A devicefabricating method according to claim 11, wherein the measured positionof the nozzle member includes a position around the axis perpendicularto the optical axis.
 13. A device fabricating method according to claim11, wherein the measured position of the nozzle member includes aposition in a direction parallel to the optical axis.
 14. A devicefabricating method according to claim 13, further comprising moving thenozzle member in the direction parallel to the optical axis based on themeasured position.
 15. A device fabricating method according to claim11, wherein the measured position of the nozzle member includes aposition in a direction perpendicular to the optical axis.
 16. A devicefabricating method according to claim 15, further comprising moving thenozzle member in the direction perpendicular to the optical axis basedon the measured position.
 17. A device fabricating method according toclaim 11, wherein the measured position of the nozzle member includes aposition around the optical axis.
 18. A device fabricating methodaccording to claim 17, further comprising rotating the nozzle memberaround the optical axis based on the measured position.
 19. A devicefabricating method according to claim 11, wherein the nozzle member ismoved under a feed-back control based on the measured position.
 20. Adevice fabricating method according to claim 19, wherein the nozzlemember is moved under a feed-forward control.